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| Datasheet File OCR Text: |
| hexfet power mosfet applications high efficiency synchronous rectification in smps uninterruptible power supply high speed power switching hard switched and high frequency circuits s d g v dss 150v r ds ( on ) typ. 9.3m ? max. 11m ? i d (silicon limited) 104a absolute maximum ratings symbol parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v dv/dt peak diode recovery v/ns t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) mounting torque, 6-32 or m3 screw avalanche characteristics e as (thermally limited) single pulse avalanche energy mj thermal resistance symbol parameter typ. max. units r jc junction-to-case ??? 0.40 r cs case-to-sink, flat greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 830 380 18 10lb in (1.1n m) a c 300 -55 to + 175 20 2.5 max. 104 74 420 gds gate drain source to-220ab d s d g benefits improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capacitance and avalanche soa enhanced body diode dv/dt and di/dt capability lead free rohs compliant, halogen-free form quantity IRFB4115PBF to-220 tube 50 IRFB4115PBF base part number package type standard pack orderable part number repetitive rating; pulse width limited by max. junction temperature. recommended max eas limit, starting t j = 25c, l = 0.17mh, r g = 25 ? , i as = 100a, v gs =15v. i sd 62a, di/dt 1040a/s, v dd v (br)dss , t j 175c. pulse width 400s; duty cycle 2%. s d g c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . when mounted on 1" square pcb (fr-4 or g-10 material). for recom mended footprint and soldering techniques refer to application note #an-994. static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 150 ??? ??? v ? v ( br ) dss / ? t j breakdown voltage temp. coefficient ??? 0.18 ??? v/c r ds(on) static drain-to-source on-resistance ??? 9.3 11 m ? v gs(th) gate threshold voltage 3.0 ??? 5.0 v i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 r g internal gate resistance ??? 2.3 ??? ? dynamic @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units gfs forward transconductance 97 ??? ??? s q g total gate charge ??? 77 120 nc q gs gate-to-source charge ??? 28 ??? q gd gate-to-drain ("miller") charge ??? 26 ??? q sync total gate charge sync. (q g - q gd ) ??? 51 ??? t d(on) turn-on delay time ??? 18 ??? ns t r rise time ??? 73 ??? t d(off) turn-off delay time ??? 41 ??? t f fall time ??? 39 ??? c iss input capacitance ??? 5270 ??? pf c oss output capacitance ??? 490 ??? c rss reverse transfer capacitance ??? 105 ??? c oss eff. (er) effective output capacitance (ener g y related) ??? 460 ??? c oss eff. (tr) effective output capacitance (time related) ??? 530 ??? diode characteristics symbol parameter min. typ. max. units i s continuous source current ??? ??? 104 a (body diode) i sm pulsed source current ??? ??? 420 a (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 86 ??? ns t j = 25c v r = 130v, ??? 110 ??? t j = 125c i f = 62a q rr reverse recovery charge ??? 300 ??? nc t j = 25c di/dt = 100a/s ??? 450 ??? t j = 125c i rrm reverse recovery current ??? 6.5 ??? a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) i d = 62a r g = 2.2 ? v gs = 10v v dd = 98v i d = 62a, v ds =0v, v gs = 10v t j = 25c, i s = 62a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = 250a reference to 25c, i d = 3.5ma v gs = 10v, i d = 62a v ds = v gs , i d = 250a v ds = 150v, v gs = 0v v ds = 150v, v gs = 0v, t j = 125c mosfet symbol showing the v ds = 75v conditions v gs = 10v v gs = 0v v ds = 50v ? = 1.0 mhz, see fig. 5 v gs = 0v, v ds = 0v to 120v , see fig. 11 v gs = 0v, v ds = 0v to 120v conditions v ds = 50v, i d = 62a i d = 62a v gs = 20v v gs = -20v fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 60s pulse width tj = 25c 5.0v 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 2 4 6 8 10 12 14 16 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 50v 60s pulse width 0 20406080100 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v v ds = 75v v ds = 30v i d = 62a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 62a v gs = 10v fig 8. maximum safe operating area fig 10. drain-to-source breakdown voltage fig 7. typical source-drain diode forward voltage fig 11. typical c oss stored energy fig 9. maximum drain current vs. case temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 i d , d r a i n c u r r e n t ( a ) -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 140 150 160 170 180 190 200 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 3.5ma -20 0 20 40 60 80 100 120 140 160 v ds, drain-to-source voltage (v) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 e n e r g y ( j ) 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec dc fig 12. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 5.0 6.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 1.0ma i d = 1.0a fig 13. maximum effective transient thermal impedance, junction-to-case 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.245 0.0059149 0.155 0.0006322 j j 1 1 2 2 r 1 r 1 r 2 r 2 c c ci = i / ri ci= i / ri fig 14. typical avalanche current vs.pulsewidth 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart = 25c (single pulse) !"#$ %#&% ' 0 200 400 600 800 1000 di f /dt (a/s) 0 10 20 30 40 50 i r r ( a ) i f = 42a v r = 130v t j = 25c t j = 125c !"#$ %#&% ' 0 200 400 600 800 1000 di f /dt (a/s) 0 10 20 30 40 50 i r r ( a ) i f = 62a v r = 130v t j = 25c t j = 125c !"#$ &(% ' !"#$ &(% ' 0 200 400 600 800 1000 di f /dt (a/s) 0 500 1000 1500 2000 2500 q r r ( n c ) i f = 42a v r = 130v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 600 1200 1800 2400 3000 q r r ( n c ) i f = 62a v r = 130v t j = 25c t j = 125c ) fig 21a. switching time test circuit fig 21b. switching time waveforms fig 20b. unclamped inductive waveforms fig 20a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 22a. gate charge test circuit fig 22b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 19. * %# %' "& for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + + + - + + + - - - ? ? ! "#"" ? $ % % ? "#""& # d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v ds 90% 10% v gs t d(on) t r t d(off) t f '( 1 ) $ 0.1 % ! + - , to-220ab packages are not recommended for surface mount application. irfb4115 irfb4115 g pyww? lc lc part number date code p = lead-free y = last digit of year ww = work week ? = assembly site code international rectifier logo assembly lot code or ywwp lc lc part number date code y = last digit of year ww = work week p = lead-free international rectifier logo assembly lot code - . / 01 $1'' '$ ! '#' ..2$$% 344& $ moisture sensitivity level to-220 n/a rohs compliant qualification information ? industrial ? (per jedec jesd47f ?? guidelines) yes qualification level ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated data sheet with new ir corporate template. ? updated package outline & part marking on page 7. ? added bullet point in the benefits "rohs compliant, halogen -free" on page 1. ? updated typo on the fig.16 and fig.17, unit of y-axis from "a" to "nc" on page 5. 11/6/2014 ? added fig 14 - typical avalanc he current vs pulsewidth on page 5. 4/28/2014 |
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